Ref: 629
Brand: ModMaker
Atty stand 510s with glue grooves for better adhesion inside stand material.
Ref: 25
Very popular silver tactile switch with a sphere actuator measuring approx 4mm diameter.
Ref: 613
Brand: ModMaker
Mosfet board with on off feature and protection
Ref: 555
Brand: ModMaker
Large positive nut for the MM510 Squonk version.
Ref: 692
Brand: ModMaker
510 drip tip blanks made from 304 stainless steel.
The most used N-Channel mosfet in modding.
| Channel Type | N |
| Maximum Continuous Drain Current | 343 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 108 nC @ 4.5 V |
| Width | 4.83mm |
| Length | 10.67mm |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Height | 9.02mm |
| Minimum Operating Temperature | -55 °C |
| Series | HEXFET |
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The most used N-Channel mosfet in modding.
- Dimensions: 10.67 x 4.83 x 9.02mm
- Maximum Continuous Drain Current: 343 A - Maximum Drain Source Resistance: 0.002
- Maximum Drain Source Voltage: 40 V
- Maximum Gate Source Voltage: ±20 V
- Maximum Operating Temperature: +175 °C
- Maximum Power Dissipation: 375 W
- Minimum Operating Temperature: -55 °C
- Mounting Type: Through Hole
- Number of Elements per Chip: 1
- Package Type: TO-220AB
- Typical Gate Charge @ Vgs: 108 nC V @ 4.5
- Typical Input Capacitance @ Vds: 10315 pF V @ 25
- Typical Turn-Off Delay Time: 97 ns
- Typical Turn-On Delay Time: 65 ns
The most used N-Channel mosfet in modding.
| Channel Type | N |
| Maximum Continuous Drain Current | 343 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 108 nC @ 4.5 V |
| Width | 4.83mm |
| Length | 10.67mm |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Height | 9.02mm |
| Minimum Operating Temperature | -55 °C |
| Series | HEXFET |
